Three-dimensional deposition of ZnO thin layer on nanopatterned silicon substrate

Three-dimensional deposition of 15nm thick ZnO thin layer can be achieved successfully on nanopatterned silicon substrate. The nanopatterned silicon (NPSi) substrate was prepared by two-step ICP etching using anodic aluminum oxide (AAO) film as etching mask. The average diameter and depth for the si...

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Bibliographic Details
Published in:Materials letters 2016-10, Vol.181, p.34-37
Main Authors: Tian, Ji-Li, Wang, Gui-Gen, Zhang, Hua-Yu
Format: Article
Language:English
Subjects:
3D ZnO thin layer
Atomic layer deposition
Inductively coupled plasma
Microstructure
Nanopatterned silicon substrate
Semiconductors
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Summary:Three-dimensional deposition of 15nm thick ZnO thin layer can be achieved successfully on nanopatterned silicon substrate. The nanopatterned silicon (NPSi) substrate was prepared by two-step ICP etching using anodic aluminum oxide (AAO) film as etching mask. The average diameter and depth for the silicon nanopore arrays are approximately 60nm and 300nm, respectively. Also, the NPSi substrate was entirely covered by ZnO thin layer grown by atomic layer deposition. It is believed that the above-mentioned process may provide a good alternative for the preparation of three-dimensional ZnO film and device. •Using AAO as etching mask, nanopatterned silicon substrate can be prepared by two-step ICP etching.•ZnO film can be grown on nanopatterned silicon substrate by ALD method.•3D ZnO thin layer with 15nm thickness but good crystallization can be obtained.
ISSN:0167-577X
1873-4979
DOI:10.1016/j.matlet.2016.06.002