Large area MoS2/Si heterojunction-based solar cell through sol-gel method

•Large area MoS2 films were prepared by sol-gel method for MoS2/Si solar cells.•The introduction of MoS2 films playing the effects of chemical and field passivation.•The efficiency of large area MoS2/Si solar cells is up to 4.6%. Large area MoS2/Si heterojunction-based solar cell was prepared in whi...

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Bibliographic Details
Published in:Materials letters 2019-03, Vol.238, p.13-16
Main Authors: Xu, Heju, Xin, Litao, Liu, Linlin, Pang, Dequan, Jiao, Yuxiao, Cong, Ridong, Yu, Wei
Format: Article
Language:English
Subjects:
MoS2
Sol-gel method
Solar cell
Thin film
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Summary:•Large area MoS2 films were prepared by sol-gel method for MoS2/Si solar cells.•The introduction of MoS2 films playing the effects of chemical and field passivation.•The efficiency of large area MoS2/Si solar cells is up to 4.6%. Large area MoS2/Si heterojunction-based solar cell was prepared in which MoS2 thin film was directly grown on p-Si wafer using sol-gel method. Chemical bonding and microstructure analysis show that the MoS2 film was in the initial region of transition from amorphous to microcrystalline phase. Compared with the ITO/p-Si/Ag structure without MoS2, the open-circuit voltage (VOC), short-circuit current density (JSC) and fill factor (FF) of the ITO/MoS2/p-Si/Ag solar cell were improved dramatically, and the conversion efficiency (CE) increased from 1.1% to 4.6%. The insertion of MoS2 film reduced the interface defects concentration and increased the depletion region width of the solar cell, showing its enhancement effect on both chemical passivation and field passivation.
ISSN:0167-577X
1873-4979
DOI:10.1016/j.matlet.2018.11.051