Electric and optoelectronic balances of silicon photodetectors coupled with colloid carbon nanodots

•Coupling of colloid carbon nanodots with Si as UV photodetectors is realized.•The underlying detection mechanism is investigated.•Responsivity of 15.9 A/W for sensing 352-nm lights is realized. We present the efficient ultraviolet photodetectors made with the incorporation of colloid carbon nanodot...

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Bibliographic Details
Published in:Materials letters 2023-04, Vol.336, p.133857, Article 133857
Main Authors: Hsiao, Po-Hsuan, Gao, Zi-Xi, Juan, Joon-Ching, Lin, Yu-Pin, Chen, Sung-Yu, Chen, Chia-Yun
Format: Article
Language:English
Subjects:
Colloid nanodots
Optical properties
Photodetectors
Surfaces
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Summary:•Coupling of colloid carbon nanodots with Si as UV photodetectors is realized.•The underlying detection mechanism is investigated.•Responsivity of 15.9 A/W for sensing 352-nm lights is realized. We present the efficient ultraviolet photodetectors made with the incorporation of colloid carbon nanodot (CCND) layers with silicon substrates. By investigating the morphologies, microstructure, light absorption and carrier dynamics, the control over CCND thickness is envisioned for the improvement of photosensing characteristics. We find that 35-nm thick CCNDs coupled with Si can reach remarkable sensing responsivity of 15.9 A/W and detectivity of 2.94 × 1014 Jones under detecting lights with wavelength of 352 nm. The underlying mechanism is interpreted by the synergetic contributions from reduced dynamic dark currents and efficient charge separation from CCND/Si heterojunction.
ISSN:0167-577X
1873-4979
DOI:10.1016/j.matlet.2023.133857