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Preparation and evaluation of Zn(O,S) thin film layer by sulfurization method

•Zn(O,S) thin films were successfully prepared using radio frequency magnetron sputtering followed by sulfurization.•ZnS intensity peaks increase as the sulfur weight increase at a sulfurization temperature of 500 °C.•The grain size of the films increases as the weight of sulfur increases.•The films...

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Bibliographic Details
Published in:Materials letters 2023-10, Vol.349, p.134697, Article 134697
Main Authors: Bahrudin, MS, Arsad, A.Z., Abdullah, S.F., Azman, N.I., Chau, C.F., Ahmad, I., Adini, W.S.W., Mahmood Zuhdi, A.W., Wan Abdullah, W.S.
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Language:English
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Summary:•Zn(O,S) thin films were successfully prepared using radio frequency magnetron sputtering followed by sulfurization.•ZnS intensity peaks increase as the sulfur weight increase at a sulfurization temperature of 500 °C.•The grain size of the films increases as the weight of sulfur increases.•The films had increased transmittance and energy gaps after sulfurizing. In this paper, we propose a method of incorporating sulfur on the ZnO film surface, which can effectively alter the properties of the ZnO. Through sulfurization, a ZnS cubic crystal structure is formed in the ZnO film, with the ZnS peak increasing as the sulfur weight increases. This approach may pave the way for the successful production of Zn(O,S) film which may suit as an alternative buffer layer for CIGS solar cell structure.
ISSN:0167-577X
1873-4979
DOI:10.1016/j.matlet.2023.134697