Fabrication of CdSe/Si nanostructure for self-powered visible light photodetector

• Published in: Materials letters 2024-09, Vol.371, p.136930, Article 136930
• Main Author: Yahya Salih, Ethar
• Format: Article
• Language: English
• Subjects: CdSe/Si; Self-powered; Visible light photodetector
• ISSN: 0167-577X; 1873-4979
• DOI: 10.1016/j.matlet.2024.136930

[Display omitted] •Self-powered visible light CdSe/Si photodetector.•Pronounced spectral response at 575 nm.•Rapid rise/fall periods of 0.31 and 0.34 sec.•Time-resolved based power dependency indicated linear correlation at 0 bias. Self-powered visible light photodetector based nanostructured CdSe/Si geometry was fabricated using pulsed laser deposition (PLD). Herein, a detailed microstructural investigation was demonstrated in conjunction with the overall device photoresponsive performance. Particularly, an average particle diameter of 66.62 nm along optical band gap of 2.25 eV were attained. This was, subsequently, perceived in the fabricated device spectral response performance during which photocurrent (Iph) of 47 µA was attained under incident light of 575 nm and 6 mW/cm2, the nearest incident wavelength to the obtained optical band gap. At the reported incident light features, the proposed arrangement exhibited responsivity (Rλ) of 7.85 mA/W with light to dark current ratio (Iph/ID) of 998 %, respectively. Herein, the incident power variation suggested a linear increment (R2≈ 0.94) in both Iph and Iph/ID profiles, with values of 71 µA and 1501 %, respectively, at 575 nm and 26 mW/cm2. The fabricated device exhibited a pronounced time-resolved feature with rise/fall periods of 0.31 and 0.34 sec., while the power dependance based time-resolved behavior indicated a linear correlation between the stated factors with R2 value of 0.924, both of which were carried out at 0 bias voltage. The dual-singularity evidenced the self-powered feature of the proposed photodetector, where zero external potential is required.