Design and Simulation of Nanoscale Double Gate MOSFET using high K Material and Ballistic Transport Method

The Phenomenal scaling of MOSFET helps in sustaining of Moore’s law and also helped in improving the performance. As per the 2009 ITRS projection document the channel length will go down to 12nm approximately by 2020 and moving beyond the 50nm technology conventional MOSFET technology needs advancem...

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Bibliographic Details
Main Authors: Kumar Suhag, Ashok, Sharma, Rakesh
Format: Conference Proceeding
Language:English
Subjects:
Ballastic Transport
Double Gate Mosfet
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Summary:The Phenomenal scaling of MOSFET helps in sustaining of Moore’s law and also helped in improving the performance. As per the 2009 ITRS projection document the channel length will go down to 12nm approximately by 2020 and moving beyond the 50nm technology conventional MOSFET technology needs advancement to overcome the restrictions imposed by fundamental Physics [1] such as tunnelling of charge carriers through gate oxide, increased leakage current. Reduction in leakage current and short channel effects can be achieved using high K dielectric material. Double gate MOSFET is another possible solution as multiple gates devices improves the circuit performance like improvement in the short channel effects because of better charge control, faster circuit speed because of increased current. Improvement of short channel effects in Double gate MOSFET allows additional gate length scaling.
ISSN:2214-7853
2214-7853
DOI:10.1016/j.matpr.2017.06.390