Titanium dioxide and Zinc oxide as a Dielectric Material for Application in TFT’s

Multiple dielectrics are being studied for a wide range of applications for large area and flexible electronics. In view to address the challenges of thin film transistors based on amorphous semiconductors, nanocarbons, metal oxides and organics semiconductors, Titanium dioxide (TiO2) and Zinc oxide...

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Bibliographic Details
Main Authors: Omprakash, S.S., Naveen Kumar, S.K., Holla, Ravishankar
Format: Conference Proceeding
Language:English
Subjects:
Dr. Blade and RF-magnetron sputtering
Thin Film Transistor
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Summary:Multiple dielectrics are being studied for a wide range of applications for large area and flexible electronics. In view to address the challenges of thin film transistors based on amorphous semiconductors, nanocarbons, metal oxides and organics semiconductors, Titanium dioxide (TiO2) and Zinc oxide (ZnO) films have been studied as potential dielectric layers. TiO2 film was coated by Dr Blade technique and ZnO film was coated by the process of RF-magnetron sputtering on Fluorine doped tin oxide substrate. Study of morphological, compositional, optical, electrical and electronic properties has been done to look at the feasibility of these materials as dielectrics for TFT’s.
ISSN:2214-7853
2214-7853
DOI:10.1016/j.matpr.2017.12.370