Influence on distance between substrate and target on the properties of CuO thin film prepared by DC reactive magnetron sputtering

The Copper thin films were grown on glass slide and silicon wafer substrate by DC reactive magnetron sputtering with a 99.995% pure copper target. The distance between substrate and target was varied from 87 to 117 mm. The structural, morphology and electrical properties of the prepared samples were...

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Bibliographic Details
Main Authors: Sangwaranatee, N.W., Sangwaranatee, N., Chananonnawathorn, C., Horprathum, M.
Format: Conference Proceeding
Language:English
Subjects:
Copper oxide
Magnetron Sputtering
Sheet resistance
Structure
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Summary:The Copper thin films were grown on glass slide and silicon wafer substrate by DC reactive magnetron sputtering with a 99.995% pure copper target. The distance between substrate and target was varied from 87 to 117 mm. The structural, morphology and electrical properties of the prepared samples were investigated by X-ray diffraction (XRD), field-emission electron microscope (FE-SEM) and four-point-probe, respectively. All of the prepared samples were polycrystalline with a monoclinic tenorite. In addition, as the distance from substrate and target decreases further, the grain size increases and sheet resistance decreases.
ISSN:2214-7853
2214-7853
DOI:10.1016/j.matpr.2018.02.037