Laser Molecular Beam Epitaxy (LMBE) Technique grown GaN p-n junction

Gallium Nitride (GaN) thin films have been prepared using Laser Molecular Beam Epitaxy (LMBE) technique at moderate growth temperature in N2 gas ambience. The structural and optical properties of the films were optimized. A p-n junction diode has been successfully realised using GaN film grown by UH...

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Bibliographic Details
Main Authors: Dewan, Sheetal, Tomar, Monika, Tandon, R.P., Gupta, Vinay
Format: Conference Proceeding
Language:English
Subjects:
Gallium Nitride
Laser MBE
p-n heterojunction
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Summary:Gallium Nitride (GaN) thin films have been prepared using Laser Molecular Beam Epitaxy (LMBE) technique at moderate growth temperature in N2 gas ambience. The structural and optical properties of the films were optimized. A p-n junction diode has been successfully realised using GaN film grown by UHV-LMBE technique and p-type Mg:GaN/Sapphire substrate. Rectifying diode characteristics with low knee voltage of 1.2V were obtained for the prepared p-n junction, highlighting the promising prospects of employing LMBE technique for the realization of GaN based LEDs.
ISSN:2214-7853
2214-7853
DOI:10.1016/j.matpr.2018.05.018