Effect of Al-doped ZnO for Electron Transporting Layer in Planar Perovskite solar cells

• Published in: Materials today : proceedings 2019, Vol.17, p.1259-1267
• Main Authors: Bhoomanee, Chawalit, Ruankhama, Pipat, Choopun, Supab, Prathan, Aschariya, Wongratanaphisan, Duangmanee
• Format: Article
• Language: English
• Subjects: AZO; electron transporting layer; perovskite solar cells
• ISSN: 2214-7853; 2214-7853
• DOI: 10.1016/j.matpr.2019.06.014

Perovskite based solar cells have attracted the photovoltaic industry as storm due to their impressive efficiency, from under 4% in 2009 to over 20% in 2017. This work presents zinc oxide (ZnO) adopted as an electron transport material (ETM) layer in the planar perovskite solar cells due to its simple synthesis and excellent electrical properties. ZnO ETM in conventional perovskite solar cells shows the lower efficiency since ZnO will react with the organic cation (CH3NH3+) of perovskite. Extrinsically doping a small amount of Aluminium (Al) with ZnO (AZO) was used to improve the physicochemical properties of ZnO. The AZO ETM was prepared by spin coating technique with AZO sol-gel at 0, 0.5, 1.0, 1.5, 2.0, 2.5, and 3.0 at% Al doping. Compared to the ZnO ETM based perovskite cell, the cell based on AZO ETM shows the highest Voc and Jsc. The perovskite cell with AZO ETM above 1.5 at% Al doping exhibits better and stable the performance cells because doing so can encourage the charge transporting and match the band energy with MAPbI3 compared to pure ZnO. © 2018 Elsevier Ltd. All rights reserved. Selection and/or Peer-review under responsibility of The First Materials Research Society of Thailand International Conference.