Active region designs and mounting schemes of THz quantum-cascade laser

THz quantum cascade-lasers (QCLs) are the best sources for generating efficient THz radiations, which are fabricated by the semiconductor heterostructure. The layers of GaAs quantum wells and AlGaAs barriers are formed with different thicknesses to design the heterostructure. In the present paper, w...

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Bibliographic Details
Main Authors: Kaur, Harpreet, Singh, Manjot, Chauhan, Ayushi, Sharma, Rajesh
Format: Conference Proceeding
Language:English
Subjects:
Active region designs
Comparison of the designs
Continuous wave mode
Epitaxy down mounting
THz quantum cascade laser
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Summary:THz quantum cascade-lasers (QCLs) are the best sources for generating efficient THz radiations, which are fabricated by the semiconductor heterostructure. The layers of GaAs quantum wells and AlGaAs barriers are formed with different thicknesses to design the heterostructure. In the present paper, we review different designs of THz QCLs active regions which are followed by a comparison between epitaxy-up and down processing techniques of the fabricated wafers. The present review should be helpful for the scientific community working in the scientific area of the THz radiation field and, in particular, for the researchers interested to switch from the epitaxy-up processing of the wafers to epitaxy-down mounting to make possible an increase of the operating temperature of the THz QCLs in the continuous wave operation mode.
ISSN:2214-7853
2214-7853
DOI:10.1016/j.matpr.2019.12.240