P-type polycrystalline silicon seed layer fabrication using RF-PECVD for thin film solar cells

The reported work is focussed on the construction of p-type polycrystalline Silicon (poly-Si) seed layer using a cost-efficient Aluminium Induced Crystallisation procedure. A p-type poly-Si thin film (seed layer) had been fabricated on foreign substrate (quartz). The structural and morphological cha...

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Bibliographic Details
Main Authors: Chhetri, Nikita, Das, Gaurab, Kole, Arindam, Saha, Hiranmay, Haldar, Sripada, Chatterjee, Somenath
Format: Conference Proceeding
Language:English
Subjects:
AIC
Polycrystalline silicon
SEM
XRD
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Summary:The reported work is focussed on the construction of p-type polycrystalline Silicon (poly-Si) seed layer using a cost-efficient Aluminium Induced Crystallisation procedure. A p-type poly-Si thin film (seed layer) had been fabricated on foreign substrate (quartz). The structural and morphological characterisation of the as-fabricated sample had been done through X-ray diffractometer (XRD), optical microscope (OM) and scanning electron microscope (SEM). Grain formation in the seed layer was confirmed by OM and SEM. The average crystallite size of the as-fabricated thin film was calculated to be 20.77 nm using XRD data with Scherrer equation.
ISSN:2214-7853
2214-7853
DOI:10.1016/j.matpr.2022.02.126