Vacuum ultraviolet photoconductive detector based on anatase TiO2 thin film deposited on SiO2 substrate

We report on titanium dioxide (TiO2) thin film deposited on a quartz (SiO2) substrate as an improved photoconductive detector for radiation below 200 nm wavelength (vacuum ultraviolet region, VUV). The crystalline film has an anatase phase and an average crystallite size of 10.6 nm. It has a transmi...

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Bibliographic Details
Main Authors: Cadatal-Raduban, Marilou M., Olejníček, Jiří, Kohout, Michal, Yamanoi, Kohei, Horiuchi, Yusuke, Kato, Tomoki, Ono, Shingo
Format: Conference Proceeding
Language:English
Subjects:
Detector
High energy
Semiconductor
Thin film
TiO2
Wide band gap
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Summary:We report on titanium dioxide (TiO2) thin film deposited on a quartz (SiO2) substrate as an improved photoconductive detector for radiation below 200 nm wavelength (vacuum ultraviolet region, VUV). The crystalline film has an anatase phase and an average crystallite size of 10.6 nm. It has a transmission edge at 322 nm and an optical band gap of 3.18 ± 0.02 eV. Under VUV illumination, the TiO2 photoconductive detector exhibited a photocurrent of 5.3 mA at an applied bias voltage of 100 V. The dark current measured without VUV illumination and at the same bias voltage is 8.8 × 10−6 mA, which is 6 orders of magnitude smaller compared to the photocurrent. The photoconductive VUV detector based on TiO2 thin film provides a means of directly measuring VUV radiation compared to detection via the photoluminescence of a scintillator.
ISSN:2214-7853
2214-7853
DOI:10.1016/j.matpr.2022.03.154