Impact of the secondary phase ZnS on CZTS performance solar cells using simulation program

• Main Authors: GHYATI Nabil, EL, meriem, chahbi, abdehadi, Mortadi, abderahman, mellouky, mouden Mahmoud, el, moznine reddad, El
• Format: Conference Proceeding
• Language: English
• Subjects: CZtS; Impedance spectroscopy; Scaps; Secondary phase; ZnS
• ISSN: 2214-7853; 2214-7853
• DOI: 10.1016/j.matpr.2022.03.633

In the present work ,Scaps 1d software is used to study the effect of ZnS secondary phase on the performance of solar cells. The standard CZTS-based devices are composed of a multilayer thin film formed on soda-lime glass (SLG), Mo/MoS2/CZTS/Cds/i-ZnO/ZnO Al. a metallic molybdenum (Mo) back electrode, MoS2 built between the absorber and the back contact; a p-CZTS absorber layer; an n-type buffer layer, typically Cds to form the junction of the solar cell, a TCO doped ZnO layer and a transparent ZnO:Al front contact. Ni/Al metal contact grids complete the cell. An ultrathin layer of ZnS is placed in the standard solar cell structure between the Cds buffer layer and the CZTS absorber layer to represent the second phase (SP) above CZTS [1]. Cell characteristics such as ƞ, FF, Jsc , and Voc were studied. The formation of ZnS on the surface of CZTS has negative effects on the solar cell parameters where the conversion efficiency ƞ decreases. The impact of this layer on the performance of CZTS solar cells is also investigated through the results obtained from the analysis of the complex impedance (Z*) and the modulus (M*). An equivalent circuit of the solar cell consisting of series and parallel resistors has been evolved to study the electrical behavior around each interface of this structure. This new procedure has been very beneficial for the identity of the most important parameters of the diffusion and recombination process.