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Analysis of a sandwiched piezoelectric semiconducting thermoelectric structure

•A system of governing equations for piezo-thermoelectricity is presented.•A sandwiched ZnO/ZrO2 film under fixed end and steady temperature is studied.•Solutions of stress, strain, electric displacement and electric field are obtained.•Stress in the ZnO film is mostly compressive and becomes tensil...

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Bibliographic Details
Published in:Mechanics research communications 2019-06, Vol.98, p.31-36
Main Authors: Jin, Z.-H., Yang, J.S.
Format: Article
Language:English
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Summary:•A system of governing equations for piezo-thermoelectricity is presented.•A sandwiched ZnO/ZrO2 film under fixed end and steady temperature is studied.•Solutions of stress, strain, electric displacement and electric field are obtained.•Stress in the ZnO film is mostly compressive and becomes tensile near the hot end.•Pyroelectric constant of the ZnO film significantly affects the field variables. In this paper, we analyze the piezo-thermoelectric responses of an integrated n-type piezoelectric semiconducting (PS) thermoelectric (TE) film and substrate membrane structure. Equations governing the behavior of the laminated PSTE structure are first derived based on the phenomenological theories of thermoelectricity and piezoelectric semiconductors. Closed form solutions of stress, deformation, electric displacement and electric field are obtained under a steady state thermal gradient and fixed grip end conditions. A parametric study for a zinc oxide (ZnO) PSTE film sandwiched between zirconia (ZrO2) substrate membranes show that both tensile and compressive stresses develop in the ZnO film and all field variables are dramatically influenced by the pyroelectric constant.
ISSN:0093-6413
1873-3972
DOI:10.1016/j.mechrescom.2019.05.004