Towards 2–10nm electron-beam lithography: A quantitative approach

This paper deals with three important contributions to quantitative electron beam patterning in the 2–10nm regime where typically minimal probe size is comparable to feature size. First, application of an advanced knife edge structure for accurate electron beam size measurements. Secondly, optimizat...

Full description

Saved in:
Bibliographic Details
Published in:Microelectronic engineering 2008-05, Vol.85 (5-6), p.805-809
Main Authors: Sidorkin, V., van Run, A., van Langen-Suurling, A., Grigorescu, A., van der Drift, E.
Format: Article
Language:English
Subjects:
Beam spot size
Focus optimization
Resist resolution
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This paper deals with three important contributions to quantitative electron beam patterning in the 2–10nm regime where typically minimal probe size is comparable to feature size. First, application of an advanced knife edge structure for accurate electron beam size measurements. Secondly, optimization of exposure procedure for optimum beam focus settings. And thirdly, investigation of the broadening effect of secondary electrons (SE) on the exposure process in the resists. The combined results provide a quantitative picture of limiting factors for the achievement of ultimate resolution.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2008.01.024