“Higher- κ” dielectrics for advanced silicon microelectronic devices: A combinatorial research study

Combinatorial methodology is used to rapidly screen suitable ternary higher- κ dielectrics for future complementary metal oxide semiconductor (CMOS), and dynamic random access memory (DRAM) devices. Dielectric constant ( κ) and leakage current ( L C ) were mapped from capacitance–voltage ( C– V) and...

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Bibliographic Details
Published in:Microelectronic engineering 2009-07, Vol.86 (7), p.1662-1664
Main Authors: Green, M.L., Schenck, P.K., Chang, K.-S., Ruglovsky, J., Vaudin, M.
Format: Article
Language:English
Subjects:
Combinatorial materials science
HfO 2–TiO 2–Y 2O 3
High- κ gate dielectrics
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Summary:Combinatorial methodology is used to rapidly screen suitable ternary higher- κ dielectrics for future complementary metal oxide semiconductor (CMOS), and dynamic random access memory (DRAM) devices. Dielectric constant ( κ) and leakage current ( L C ) were mapped from capacitance–voltage ( C– V) and current–voltage ( I– V) measurements. HfO 2–TiO 2–Y 2O 3 library films, made by pulsed laser deposition (PLD), have been characterized. We found a band of compositions in the middle of the HfO 2–TiO 2–Y 2O 3 phase diagram that have dielectric constants in the range of 50–80, with reasonably low leakage currents, that are therefore promising for these applications.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2009.03.068