Impact of the TiN electrode deposition on the HfO2 band gap for advanced MOSFET gate stacks

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Bibliographic Details
Published in:Microelectronic engineering 2011, Vol.88 (1), p.72-75
Main Authors: GAUMER, C, MARTINEZ, E, CHABLI, A, LHOSTIS, S, GUITTET, M.-J, GROS-JEAN, M, BARNES, J.-P, LICITRA, C, ROCHAT, N, BARRETT, N, BERTIN, F
Format: Article
Language:English
Subjects:
Applied sciences
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Diffusion in nanoscale solids
Diffusion in solids
Electron and ion emission by liquids and solids
impact phenomena
Electron energy loss spectra
Electronics
Exact sciences and technology
Impact phenomena (including electron spectra and sputtering)
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Transport properties of condensed matter (nonelectronic)
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ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2010.08.023