Influence of post deposition annealing on Y2O3-gated GaAs MOS capacitors and their reliability issues

• Published in: Microelectronic engineering 2011-03, Vol.88 (3), p.282-286
• Main Authors: Das, P.S., Biswas, A.
• Format: Article
• Language: English
• Subjects: Annealing; Applied sciences; Cold working, work hardening; annealing, quenching, tempering, recovery, and recrystallization; textures; Compound structure devices; Cross-disciplinary physics: materials science; rheology; Dielectric, amorphous and glass solid devices; Electronics; Exact sciences and technology; GaAs; Heat treatment; Materials science; Metals. Metallurgy; Physics; Production techniques; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; TDDB; Trapping centroid; Treatment of materials and its effects on microstructure and properties; Y2O3
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2010.11.022

The feasibility of employing yttrium oxide (Y2O3) as high-k gate dielectrics for GaAs metal-oxide-semiconductor (MOS) devices has been investigated. MOS capacitors were fabricated using RF-sputtered deposited Y2O3 films on NH4OH treated n-GaAs substrate. Indeed high-k (Y2O3)/GaAs MOS capacitors exhibiting fairly good electrical characteristics, for instance, especially low leakage current density, low hysteresis and allowable density of interface states, have been achieved. The effects of several annealing treatments on Y2O3-gated GaAs MOS capacitors have been investigated in order to optimize the process conditions. A decrease in accumulation capacitance (Cacc) following PDA effectively increases the equivalent oxide thickness (EOT), which is predicted to be correlated with the growth and continuous increase in the physical thickness of a lower-k inter-layer sandwiched between Y2O3 and GaAs. However, leakage currents and interface trap densities are reduced with higher values of annealing temperature. The variation of current density with an equivalent oxide thickness (EOT) has also been investigated.