Effect of thin Si insertion at metal gate/high-k interface on electrical characteristics of MOS device with La2O3

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Bibliographic Details
Published in:Microelectronic engineering 2011-07, Vol.88 (7), p.1330-1333
Main Authors: KITAYAMA, D, KOYANAGI, T, KAKUSHIMA, K, AHMET, P, TSUTSUI, K, NISHIYAMA, A, SUGII, N, NATORI, K, HATTORI, T, IWAI, H
Format: Article
Language:English
Subjects:
Applied sciences
Compound structure devices
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Dielectric, amorphous and glass solid devices
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in interface structures
Electronics
Exact sciences and technology
Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2011.03.026