Resistive switching characteristics of CMOS embedded HfO2-based 1T1R cells

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Bibliographic Details
Published in:Microelectronic engineering 2011-07, Vol.88 (7), p.1133-1135
Main Authors: WALCZYK, D, WALCZYK, Ch, SCHROEDER, T, BERTAUD, T, SOWINSKA, M, LUKOSIUS, M, FRASCHKE, M, TILLACK, B, WENGER, Ch
Format: Article
Language:English
Subjects:
Applied sciences
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
Integrated circuits
Integrated circuits by function (including memories and processors)
Magnetic and optical mass memories
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Storage and reproduction of information
Transistors
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ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2011.03.123