Realization of 850V breakdown voltage LDMOS on Simbond SOI

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Bibliographic Details
Published in:Microelectronic engineering 2012-03, Vol.91, p.102-105
Main Authors: Wang, Zhongjian, Cheng, Xinhong, He, Dawei, Xia, Chao, Xu, Dawei, Yu, Yuehui, Zhang, Dong, Wang, Yanying, Lv, Yuqiang, Gong, Dawei, Shao, Kai
Format: Article
Language:eng ; jpn
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ISSN:0167-9317
DOI:10.1016/j.mee.2011.10.014