Dual-gate field effect transistor based on ZnO nanowire with high-K gate dielectrics

• Published in: Microelectronic engineering 2012-10, Vol.98, p.343-346
• Main Authors: Yao, Zongni, Sun, Weijie, Li, Wuxia, Yang, Haifang, Li, Junjie, Gu, Changzhi
• Format: Article
• Language: English
• Subjects: Applied sciences; Cross-disciplinary physics: materials science; rheology; Dual gate; Electronics; Exact sciences and technology; Field–effect transistor; High-k dielectrics; Materials science; Molecular electronics, nanoelectronics; Nanoscale materials and structures: fabrication and characterization; Physics; Quantum wires; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transistors; ZnO nanowire
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2012.07.062

[Display omitted] ► Dual-gate ZnO nanowire field effect transistor with electron beam lithography standard process. ► HfO2 and Al2O3 dielectrics as top-gate and bottom-gate insulator layer, respectively. ► The top-gate mode electrical characteristics behavior is superior to bottom-gate mode. ► HfO2 has no improvement performance compared with Al2O3 film with larger dielectric constant. Dual gate ZnO nanowire field-effect transistor (FET) with high-k Al2O3 or HfO2 gate dielectrics was configured, which shows good transistor performance with a high on/off ratio (∼104), a low operation voltage (below 1V), a high peak transconductance (7.5nS), a relatively high field effect mobility (0.27cm2/V⋅s) and ultralow leakage current (∼10−13A). These results indicated that the ZnO nanowire FET in top-gate mode provided a better device performance than that in bottom-gate mode. Moreover, the effects of Al2O3 and HfO2 gate dielectric layers on enhancing the FET performance were discussed.