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Multiple centimetre-long fluidic-channels with smooth and vertical sidewall fabricated by novel NIL mould and thermal bonding

[Display omitted] ► The innovation SOI mould is fabricated using holographic combined with wet etching. ► The line of SOI mould is in a high uniformity linewidth and smoothness sidewalls. ► The alignment process is carried out using pre-etched hexahedron and moiré effect. ► The smooth and vertical s...

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Bibliographic Details
Published in:Microelectronic engineering 2012-10, Vol.98, p.720-724
Main Authors: Li, Xiaojun, Chen, Yong, Qiu, Keqiang, Wang, Xudi, Tian, Yangchao, You, Hui, Fu, Shaojun
Format: Article
Language:English
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Summary:[Display omitted] ► The innovation SOI mould is fabricated using holographic combined with wet etching. ► The line of SOI mould is in a high uniformity linewidth and smoothness sidewalls. ► The alignment process is carried out using pre-etched hexahedron and moiré effect. ► The smooth and vertical sidewall of SOI mould provided an easier demoulding process. ► Multiple centimetre-long fluidic-channels is fabricated by imprint and sealing of SU-8. In this paper, we demonstrate a new method for fabrication centimetre-long, dense and vertical sidewalls silicon-on-insulator (SOI) mould using holographic method combine with crystallographic anisotropic etching. Holographic method can make narrow dense and multiple continuous lines in large area while crystallographic anisotropic etching could eliminate line-edge-roughness (LER) in sidewalls and make the sidewalls nearly atomic-scale smoothness. Therefore, the line width of the SOI mould will in a high uniformity and the sidewalls will be smooth and vertical over centimetre lengths. Compare to common NIL mould, the smooth and vertical sidewall of SOI mould provided an easier demoulding process after NIL. Multiple centimetre-long fluidic-channels with smooth and vertical sidewall fabricated by faithfully imprint of SU-8 and an optimised sealing process using free-standing SU-8 bonding film.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2012.07.073