Focused ion beam milling of exfoliated graphene for prototyping of electronic devices

[Display omitted] ► FIB prototyping of graphene electronic devices without FIB imaging. ► FIB milled trenches isolate current to channel region. ► Better than 250nm alignment accuracy. ► Ohmic contact between graphene and FIB deposited electrodes. We demonstrate a focused ion beam (FIB) prototyping...

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Bibliographic Details
Published in:Microelectronic engineering 2012-10, Vol.98, p.313-316
Main Authors: Schmidt, Marek E., Johari, Zaharah, Ismail, Razali, Mizuta, Hiroshi, Chong, Harold M.H.
Format: Article
Language:English
Subjects:
Applied sciences
Cross-disciplinary physics: materials science
rheology
Electronics
Exact sciences and technology
FIB assisted deposition
FIB milling
Focused ion beam
Fullerenes and related materials
diamonds, graphite
Graphene
Materials science
Microelectronic fabrication (materials and surfaces technology)
Physics
Prototyping
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Specific materials
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Description
Summary:[Display omitted] ► FIB prototyping of graphene electronic devices without FIB imaging. ► FIB milled trenches isolate current to channel region. ► Better than 250nm alignment accuracy. ► Ohmic contact between graphene and FIB deposited electrodes. We demonstrate a focused ion beam (FIB) prototyping technique that accurately aligns a two terminal contact structure to exfoliated graphene. Alignment accuracy of better than 250nm has been achieved without direct FIB imaging of the graphene. In situ deposited tungsten is used to contact the graphene channel and the measured channel resistance is 58kΩ.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2012.07.090