Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition

[Display omitted] •First demonstration of high-k/In0.53Ga0.47As gate stack formed by PEALD.•Optical and electrical characterization of Al2O3 and HfO2 materials formed by PEALD.•Competitive Dit achieved with HF and with (NH4)2S surface preparations. We developed Al2O3 and HfO2 plasma-enhanced atomic...

Full description

Saved in:
Bibliographic Details
Published in:Microelectronic engineering 2015-11, Vol.147, p.231-234
Main Authors: Djara, Vladimir, Sousa, Marilyne, Dordevic, Nikola, Czornomaz, Lukas, Deshpande, Veeresh, Marchiori, Chiara, Uccelli, Emanuele, Caimi, Daniele, Rossel, Christophe, Fompeyrine, Jean
Format: Article
Language:English
Subjects:
Atomic layer deposition
High-k dielectrics
In0.53Ga0.47As
Interface traps
Passivation
Plasma
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:[Display omitted] •First demonstration of high-k/In0.53Ga0.47As gate stack formed by PEALD.•Optical and electrical characterization of Al2O3 and HfO2 materials formed by PEALD.•Competitive Dit achieved with HF and with (NH4)2S surface preparations. We developed Al2O3 and HfO2 plasma-enhanced atomic layer deposition (PEALD) processes as part of the integration of a new high-k/In0.53Ga0.47As gate stack. The Al2O3 featured a bandgap of 7.0eV and a k-value of 8.1, while the HfO2 presented a bandgap of 6.2eV and a k-value of 14.6. W/HfO2/Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors (MOSCAPs) were fabricated and different In0.53Ga0.47As surface preparations [HF or (NH4)2S] were tested. Both surface preparations revealed similar gate stack electrical performance. Capacitance–voltage (C–V) characteristics yielded very low frequency dispersion near accumulation (as low as 0.3% at Vg=1V). Low (
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2015.04.102