Epitaxial ZrSe2/MoSe2 semiconductor v.d. Waals heterostructures on wide band gap AlN substrates

[Display omitted] •ZrSe2 films and ZrSe2/MoSe2 structures are grown by MBE on AlN/Si(111) substrates.•High quality heteroepitaxial growth is confirmed.•The band alignment of the ZrSe2/MoSe2 heterostructures is determined.•ZrSe2/MoSe2 interface shows type II band alignment configuration. Using molecu...

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Bibliographic Details
Published in:Microelectronic engineering 2015-11, Vol.147, p.269-272
Main Authors: Tsipas, P., Tsoutsou, D., Marquez-Velasco, J., Aretouli, K.E., Xenogiannopoulou, E., Vassalou, E., Kordas, G., Dimoulas, A.
Format: Article
Language:English
Subjects:
2D semiconductors
Band alignment
Band structure
MBE
ZrSe2 films
ZrSe2/MoSe2 heterostructures
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Summary:[Display omitted] •ZrSe2 films and ZrSe2/MoSe2 structures are grown by MBE on AlN/Si(111) substrates.•High quality heteroepitaxial growth is confirmed.•The band alignment of the ZrSe2/MoSe2 heterostructures is determined.•ZrSe2/MoSe2 interface shows type II band alignment configuration. Using molecular beam epitaxy (MBE) of ZrSe2 and ZrSe2/MoSe2 heterostructures are grown on crystalline AlN(0001)/Si(111) substrates. Electron diffraction (RHEED) and valence band imaging by angle resolved photoelectron spectroscopy (ARPES) indicate high quality heteroepitaxial growth with very good in-plane crystallographic alignment with the substrate. The workfunction and band offsets are estimated by photoelectron spectroscopy and compared with first principles calculations. The constructed band alignments show that the heterostructure could form the basis for atomically thin p–n junction and 2D vertical tunneling devices.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2015.04.113