Performance of a high resolution chemically amplified electron beam resist at various beam energies

A novel negative tone molecular resist molecule featuring a tert-butyloxycarbonyl protected phenol malonate group bonded to a 1,8-Diazabicycloundece-7-ene is presented. The resist shows high-resolution capability in electron beam lithography at a range of beam energies. The resist demonstrated a sen...

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Bibliographic Details
Published in:Microelectronic engineering 2016-04, Vol.155, p.97-101
Main Authors: Yang, D.X., Frommhold, A., McClelland, A., Roth, J., Rosamond, M., Linfield, E.H., Osmond, J., Palmer, R.E., Robinson, A.P.G.
Format: Article
Language:English
Subjects:
Chemically amplification
Electron beam energy
Electron beam lithography
Molecular resist
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Summary:A novel negative tone molecular resist molecule featuring a tert-butyloxycarbonyl protected phenol malonate group bonded to a 1,8-Diazabicycloundece-7-ene is presented. The resist shows high-resolution capability in electron beam lithography at a range of beam energies. The resist demonstrated a sensitivity of 18.7μC/cm2 at 20kV. Dense features with a line width of 15nm have been demonstrated at 30kV, whilst a feature size of 12.5nm was achieved for dense lines at 100kV. [Display omitted] •A novel molecular chemically amplified negative tone resist is presented.•High resolution features have been patterned at high sensitivity.•The performance of the resist at 30, 50 and 100kV is evaluated.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2016.03.010