Formation of micro- and nanostructures with well-rounded profile by new e-beam lithography principle

It was shown that the proposed earlier method of dry electron-beam resist etching (DEBER) could be used for direct formation of micro- and nanostructures with well-rounded profile. Vertical resolution is about 1nm and exposure doses for PMMA is only 0.1–1μC/cm2. Special features of the method that s...

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Bibliographic Details
Published in:Microelectronic engineering 2016-04, Vol.155, p.92-96
Main Authors: Bruk, M.A., Zhikharev, E.N., Rogozhin, A.E., Streltsov, D.R., Kalnov, V.A., Averkin, S.N., Spirin, A.V.
Format: Article
Language:English
Subjects:
3D structuring
Diffractive optical elements
Dry electron-beam lithography
Micro- and nanostructures with well-rounded profile
Optoelectronics
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Summary:It was shown that the proposed earlier method of dry electron-beam resist etching (DEBER) could be used for direct formation of micro- and nanostructures with well-rounded profile. Vertical resolution is about 1nm and exposure doses for PMMA is only 0.1–1μC/cm2. Special features of the method that should be taken into account are analyzed. Also results of the pattern transfer to silicon and tungsten are presented. It appears that the method could be used for numerous applications, for example in optics, optoelectronics and 3D-structuring. [Display omitted] •DEBER method can be used for wide range of well-rounded patterns direct formation.•For pattern formation in PMMA by the method doses are extremely low (0.1–1μC/cm2).•High throughput and low cost e-beam lithography process might be developed.•DEBER method could be used for formation of DOE and 3D structuring.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2016.03.017