Dramatically enhanced ambient effects in a multi-layer MoS2 transistor with channel thickness near maximum depletion width

• Published in: Microelectronic engineering 2022-08, Vol.264, p.111868, Article 111868
• Main Authors: Park, Chang Seon, Lee, Changwoo, Jung, Won Jun, Park, Min, Lee, Dong Su, Lee, Hong Seok, Jeon, Dae-Young
• Format: Article
• Language: English
• Subjects: Ambient effect; Channel thickness- dependence; Ion/Ioff ratio; Maximum depletion width (Dmax); MoS2 FETs; Numerical simulation; Semiconducting two-dimensional transition-metal dichalcogenides
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2022.111868

It is known that semiconducting two-dimensional transition metal dichalcogenides such as MoS2 and WSe2, widely attracted as advanced field-effect transistors (FETs) due to good surface roughness in nano-scale and outstanding gate control with the desired bandgap, are significantly affected by oxygen and water molecules in air. Here, the channel thickness-dependent ambient effects on operation of multi-layer MoS2 FETs are investigated for the first time. In particular, a multi-layer MoS2 FET with channel thickness similar to the maximum depletion width (Dmax) exhibited dramatic changes in the on-current to off-current (Ion/Ioff) ratio under ambient conditions. The results were verified using numerical simulations. Our work is important in terms of the development and optimization of highly sensitive chemical or gas sensors, and it furthers our understanding of how multi-layer MoS2 FETs operate. [Display omitted] •Back-gated multi-layer MoS2 FETs with channels of various thickness were fabricated.•Channel thickness-dependent ambient effects in multi-layer MoS2 FETs were investigated.•O2 and H2O molecules adsorbed to the channel substantially affected the electrical properties.•A great change in the Ion/Ioff ratio was observed with a channel thickness ≈ Dmax.