Confinement effect on the intradonor 1s–2p+ transition energies in GaN quantum wells

In this work, we report a calculation of the 1s–2p+ transition energies of the donor impurity levels in a GaN–AlGaN quantum well (QW) in the presence of an external magnetic field. The impurity level energies are calculated through the variational method and the polaronic contribution is calculated...

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Bibliographic Details
Published in:Microelectronics 2005-03, Vol.36 (3-6), p.431-433
Main Authors: de Almeida, R.B., Borges, A.N., Machado, P.C.M., Osório, F.A.P.
Format: Article
Language:English
Subjects:
Impurity
Polaron
Zeeman effect
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Summary:In this work, we report a calculation of the 1s–2p+ transition energies of the donor impurity levels in a GaN–AlGaN quantum well (QW) in the presence of an external magnetic field. The impurity level energies are calculated through the variational method and the polaronic contribution is calculated via second order perturbation theory. The band non-parabolicity effects on the binding energies are included in the calculations. We have compared our results with that for GaN-bulk and verified the enhancement of the transition energy due to the electron confinement.
ISSN:1879-2391
1879-2391
DOI:10.1016/j.mejo.2005.02.039