Spin-polarized charge fluctuations in magnetic tunneling diodes

We have studied the spin polarized shot-noise current in semimagnetic tunneling diodes with different sample geometries. In general, we observe only partial shot-noise suppression near the end of the negative differential resistance (NDR) region. The charge buildup and its fluctuation on the resonan...

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Bibliographic Details
Published in:Microelectronics 2005-03, Vol.36 (3-6), p.463-465
Main Authors: Bittencourt, A.C., Estanislau, J.F., Marques, G.E.
Format: Article
Language:English
Subjects:
Charge Fluctuation
Diodes
Fluctuations
Spin Polarization
Tunneling
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Summary:We have studied the spin polarized shot-noise current in semimagnetic tunneling diodes with different sample geometries. In general, we observe only partial shot-noise suppression near the end of the negative differential resistance (NDR) region. The charge buildup and its fluctuation on the resonant levels at given geometry can help to project efficient low voltage (V
ISSN:1879-2391
1879-2391
DOI:10.1016/j.mejo.2005.02.047