Optical investigation of Si nano-crystals in amorphous silicon matrix

Paper presents the comparative investigation of photoluminescence and Raman scattering spectra of pure amorphous silicon films and amorphous silicon films with different size Si nanocrystallites. Several PL bands in the IR spectral range with maxima at 0.90, 0.98, 1.14 and 1.36eV have been revealed...

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Bibliographic Details
Published in:Microelectronics 2005-03, Vol.36 (3-6), p.510-513
Main Authors: Vivas Hernandez, A., Torchynska, T.V., Matsumoto, Y., Jimenez Sandoval, S., Dybiec, M., Ostapenko, S., Shcherbina, L.V.
Format: Article
Language:English
Subjects:
Amorphous Si
Band tail luminescence
Si QD luminescence
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Summary:Paper presents the comparative investigation of photoluminescence and Raman scattering spectra of pure amorphous silicon films and amorphous silicon films with different size Si nanocrystallites. Several PL bands in the IR spectral range with maxima at 0.90, 0.98, 1.14 and 1.36eV have been revealed in studied samples. The 0.90–0.98eV PL bands are attributed to the band tail luminescence in Si nano crystallites with the size of 15–20 nm. Concurrently, the 1.18 and 1.36eV PL bands are connected, apparently, with radiative transition between quantum confined levels within Si QDs (size of 5–6nm) embedded into a-Si matrix.
ISSN:1879-2391
1879-2391
DOI:10.1016/j.mejo.2005.02.065