Quantum capture area in layered quantum well structures

Carrier capture in quantum well structures defines high-speed properties of the lasers and amplifiers based on them. We introduce general definition of the capture area in low-dimensional heterostructures based on intersubband coupling coefficient. Spatial dependencies of intersubband coupling coeff...

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Bibliographic Details
Published in:Microelectronics 2005-03, Vol.36 (3-6), p.350-355
Main Authors: Shulika, Oleksiy V., Safonov, Ivan M., Sukhoivanov, Igor A., Lysak, Volodimir V.
Format: Article
Language:English
Subjects:
Carrier capture
Carrier–phonon interaction
Dynamics of quantum well lasers
Low-dimensional heterostructures
Semiconductor quantum wells
Transport processes
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Summary:Carrier capture in quantum well structures defines high-speed properties of the lasers and amplifiers based on them. We introduce general definition of the capture area in low-dimensional heterostructures based on intersubband coupling coefficient. Spatial dependencies of intersubband coupling coefficient, which governs in fact capture rate, suggest on insufficiency of classical definition of capture area and necessity of quantum-mechanical computation of this value. Special case of layered quantum-well structures is considered. Computational results show necessity to take into account dependence of capture area on the temperature and device operating point.
ISSN:1879-2391
1879-2391
DOI:10.1016/j.mejo.2005.02.103