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Temperature dependence of Si–GaAs energy gap using photoconductivity spectra

In the present work, we study the Energy gap (Eg) of the Si–GaAs at various temperatures in the range from 250 up to 350K, using the photoconductivity method, in order to find the relation between the Eg and the temperature. We have measured the photocurrent as a function of photon energy from 1.36...

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Bibliographic Details
Published in:Microelectronics 2006-02, Vol.37 (2), p.91-93
Main Authors: Zardas, G.E., Yannakopoulos, P.H., Ziska, M., Symeonides, Chr, Vesely, M., Euthymiou, P.C.
Format: Article
Language:English
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Summary:In the present work, we study the Energy gap (Eg) of the Si–GaAs at various temperatures in the range from 250 up to 350K, using the photoconductivity method, in order to find the relation between the Eg and the temperature. We have measured the photocurrent as a function of photon energy from 1.36 up to 1.55eV for each temperature. From the analysis of the spectra for each temperature we have found three peaks corresponding to inter-band transitions and we plotted the energy that corresponds to the peaks as a function of temperature.
ISSN:1879-2391
1879-2391
DOI:10.1016/j.mejo.2005.04.056