Effect of In content of the buffer layer on crystalline quality and electrical property of In0.82Ga0.18As/InP grown by LP-MOCVD

The In0.82Ga0.18As grown on InP (100) substrates by low pressure metalorganic chemical vapor deposition (LP-MOCVD) with two-step growth method was investigated. It was analyzed that the effect of In content of buffer layer on the crystalline quality and electrical property of the In0.82Ga0.18As epli...

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Bibliographic Details
Published in:Microelectronics 2007-03, Vol.38 (3), p.398-400
Main Authors: Zhang, Tiemin, Miao, Guoqing, Jin, Yixin, Xie, Jianchun, Jiang, Hong, Li, Zhiming, Song, Hang
Format: Article
Language:English
Subjects:
Buffer layer
In0.82Ga0.18As
MOCVD
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Summary:The In0.82Ga0.18As grown on InP (100) substrates by low pressure metalorganic chemical vapor deposition (LP-MOCVD) with two-step growth method was investigated. It was analyzed that the effect of In content of buffer layer on the crystalline quality and electrical property of the In0.82Ga0.18As eplialyers, which were characterized by X-ray diffraction, scanning electron microscopy, and Hall effect. The experiments show that the crystalline quality and the electrical property of the In0.82Ga0.18As eplialyers have close relation to the In content of buffer layer and will be optimum when the In content of buffer layer is same as that of the epilayer.
ISSN:1879-2391
1879-2391
DOI:10.1016/j.mejo.2007.01.015