Switching times variation of MOSFET devices with temperature and high-field stress

Switching times of power MOSFET devices are investigated as function of temperature and high-field stress. Measurements show that important variations are obtained on the devices turn-on time. The threshold voltage is decreasing with temperature and varies with stress, especially at low temperatures...

Full description

Saved in:
Bibliographic Details
Published in:Microelectronics 2008-05, Vol.39 (5), p.828-831
Main Authors: Habchi, R., Salame, C., El Bitar, R., Mialhe, P.
Format: Article
Language:English
Subjects:
High-field stress
MOSFET
Switching time
Temperature
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Switching times of power MOSFET devices are investigated as function of temperature and high-field stress. Measurements show that important variations are obtained on the devices turn-on time. The threshold voltage is decreasing with temperature and varies with stress, especially at low temperatures. The oxide leakage current is found to be having safe values even at high temperatures, stressing the devices does not increase the leakage current to unsafe values except for very high temperatures.
ISSN:1879-2391
1879-2391
DOI:10.1016/j.mejo.2007.12.028