Preliminary comparison of ballistic electron emission spectroscopy measurements on InAs quantum dots in a GaAs/AlGaAs heterostructure grown by MBE and MOVPE

Self-assembled InAs quantum dots (SAQDs) in GaAs/GaAlAs structures grown by molecular beam epitaxy (MBE) and metal-organic vapour phase epitaxy (MOVPE) of similar size was examined by ballistic electron emission spectroscopy. Ballistic current–voltage characteristics through the QD in the voltage ra...

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Bibliographic Details
Published in:Microelectronics 2009-03, Vol.40 (3), p.496-498
Main Authors: Vaniš, Jan, Zelinka, Jiří, Malina, Václav, Henini, Mohamed, Pangrác, Jiří, Melichar, Karel, Hulicius, Eduard, Šroubek, Filip, Walachová, Jarmila
Format: Article
Language:English
Subjects:
Ballistic electron emission spectroscopy
Quantum dot
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Summary:Self-assembled InAs quantum dots (SAQDs) in GaAs/GaAlAs structures grown by molecular beam epitaxy (MBE) and metal-organic vapour phase epitaxy (MOVPE) of similar size was examined by ballistic electron emission spectroscopy. Ballistic current–voltage characteristics through the QD in the voltage range from 0.55 to 0.9V (range where the presence of resonance states of QD is expected) with its derivative (the derivation of the spectroscopic characteristics represents quantum levels in the QD) are given. Differences in the intensities and sharpnesses of the QD levels for MBE and MOVPE grown QDs are observed.
ISSN:1879-2391
1879-2391
DOI:10.1016/j.mejo.2008.06.054