Laser-induced self-organization of nano-wires on SiO2/Si interface

Original observation of new graded band gap structures formed on the surface of elementary Si semiconductor at studying the optical properties of Si nano-hills formed at the SiO2/Si interface by pulsed Nd:YAG laser irradiation is reported. The self-organized nano-hills on Si surface are characterize...

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Bibliographic Details
Published in:Microelectronics 2009-03, Vol.40 (3), p.449-451
Main Authors: Medvid, Artur, Dmitruk, Igor, Onufrijevs, Pavels, Pundyk, Iryna
Format: Article
Language:English
Subjects:
AFM
Graded band gap Si
Laser radiation
Nano-hills
Photoluminescence
SiO2/Si
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Summary:Original observation of new graded band gap structures formed on the surface of elementary Si semiconductor at studying the optical properties of Si nano-hills formed at the SiO2/Si interface by pulsed Nd:YAG laser irradiation is reported. The self-organized nano-hills on Si surface are characterized by a strong photoluminescence in the visible range of spectrum with a shoulder extended to the long-wave part of the spectrum. The feature is explained by the quantum confinement effect in nano-hills–nano-wires of gradually changing diameter.
ISSN:1879-2391
1879-2391
DOI:10.1016/j.mejo.2008.06.073