Low-threshold ZnSe microdisk laser based on fluorine impurity bound-exciton transitions

Impurity states in semiconductors, in which two long-lived ground states can be optically coupled to a single excited state, provide a powerful mechanism for applications including lasing without inversion, electromagnetically induced transparency, and optically addressable quantum memory for quantu...

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Bibliographic Details
Published in:Microelectronics 2009-02, Vol.40 (2), p.256-258
Main Authors: Pawlis, A., Panfilova, M., Sanaka, K., Ladd, T.D., As, D.J., Lischka, K., Yamamoto, Y.
Format: Article
Language:English
Subjects:
Impurities
Low-threshold lasing
Microdisk resonator
Nanostructures
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Summary:Impurity states in semiconductors, in which two long-lived ground states can be optically coupled to a single excited state, provide a powerful mechanism for applications including lasing without inversion, electromagnetically induced transparency, and optically addressable quantum memory for quantum information processing. We report low-threshold lasing from fluorine-doped ZnMgSe/ZnSe quantum wells in microdisk cavities. The lasing mechanism was studied by power-dependent photoluminescence spectroscopy. Lasing thresholds lower than 50Wcm−2 were observed and the fraction of spontaneous emission contributed to the lasing modes was about β=0.03–0.1.
ISSN:1879-2391
1879-2391
DOI:10.1016/j.mejo.2008.07.014