TCAD study on gate-all-around cylindrical (GAAC) transistor for CMOS scaling to the end of the roadmap

In this paper, we report TCAD study on gate-all-around cylindrical (GAAC) transistor for sub-10-nm scaling. The GAAC transistor device physics, TCAD simulation, and proposed fabrication procedure have been discussed. Among all other novel fin field effect transistor (FinFET) devices, the gate-all-ar...

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Bibliographic Details
Published in:Microelectronics 2009-12, Vol.40 (12), p.1766-1771
Main Authors: Xiao, Deyuan, Wang, Xi, Yu, Yuehui, Chen, Jing, Zhang, Miao, Xue, Zhongying, Luo, Jiexin
Format: Article
Language:English
Subjects:
Device physics
Fabrication procedure
Gate-all-around cylindrical (GAAC) transistor
TCAD simulation
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Summary:In this paper, we report TCAD study on gate-all-around cylindrical (GAAC) transistor for sub-10-nm scaling. The GAAC transistor device physics, TCAD simulation, and proposed fabrication procedure have been discussed. Among all other novel fin field effect transistor (FinFET) devices, the gate-all-around cylindrical device can be particularly used for reducing the problems of conventional multi-gate FinFET, improving device performance, and scaling-down capabilities. With gate-all-around cylindrical architecture, the transistor is controlled essentially by infinite number of gates surrounding the entire cylinder-shaped channel. Electrical integrity within the channel is improved by reducing the leakage current due to the non-symmetrical field accumulation such as the corner effect. Our proposed fabrication procedure for making devices having the gate-all-around cylindrical (GAAC) device architecture is also discussed.
ISSN:1879-2391
1879-2391
DOI:10.1016/j.mejo.2009.09.008