Study on crosstalk characteristic of carbon nanotube through silicon vias for three dimensional integration

• Published in: Microelectronics 2015-07, Vol.46 (7), p.572-580
• Main Authors: Qian, Libo, Xia, Yinshui, Liang, Guojian
• Format: Article
• Language: English
• Subjects: Air gap-based SOI technique; CNT–TSV crosstalk; Noise transfer function; Peak noise voltage; Shielding structure
• ISSN: 1879-2391; 1879-2391
• DOI: 10.1016/j.mejo.2015.04.002

Coupling noise induced by through silicon vias (TSVs) is expected to be a major concern for three dimensional integrated circuits (3-D ICs) system design. Using equivalent electrical parameters for carbon nanotube (CNT) TSV interconnects, a lumped crosstalk noise model is introduced to capture the TSV-to-TSV coupling noise in CNT via based 3-D ICs and validated with multiple conductor transmission line (MTL) simulation results. The effect of geometrical and material parameters involved on the noise transfer function and peak crosstalk noise, such as insulation thickness, TSV–TSV spacing, TSV height, TSV radius, substrate conductivity and metallic CNT density, is investigated with the proposed model. Simulation results show that the TSV coupling can be divided into three frequency behavior regions. Three approaches using driver sizing, grounded vias shielding and air gap-based silicon-on-insulator (SOI) technique are proposed to mitigate TSV crosstalk coupling noise. The proposed approaches are demonstrated in frequency- and time- domain simulations. They provide the reduction in full-band noise transfer function by an average of 11.71dB, 24.85dB and 3.46dB, and the decrease in 1GHz peak noise voltage by 53.24mV, 40.72mV and 15.1mV.