A comparative study of SiC MOSFETs with and without integrated SBD

A comparative study on SiC MOSFETs is carried out with an emphasis on the design of integrated Schottky barrier diode (SBD) with numerical simulations by Sentaurus TCAD. Compared with the conventional SiC MOSFET (C-MOS) and the conventional SBD-embedded SiC MOSFET (C-MOSBD), the MOSFET (M-MOSBD) fea...

Full description

Saved in:
Bibliographic Details
Published in:Microelectronics 2022-10, Vol.128, p.105576, Article 105576
Main Authors: Tang, Lei, Jiang, Huaping, Wei, Jin, Hu, Qiaozhen, Zhong, Xiaohan, Qi, Xiaowei
Format: Article
Language:English
Subjects:
Electric field
Miller capacitance
MOSFET
SBD
Silicon carbide (SiC)
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A comparative study on SiC MOSFETs is carried out with an emphasis on the design of integrated Schottky barrier diode (SBD) with numerical simulations by Sentaurus TCAD. Compared with the conventional SiC MOSFET (C-MOS) and the conventional SBD-embedded SiC MOSFET (C-MOSBD), the MOSFET (M-MOSBD) features a hybrid doping mesa above the JFET region where a Schottky contact is formed, which exhibits a superior trade-off between the on-state resistance (Rdson) and the reverse transfer capacitance (Crss). Besides, the integrated diode in M-MOSBD renders a better trade-off between OFF-state junction field (ESmax) and forward voltage (VF) when compared to C-MOSBD and the conventional junction barrier Schottky diode (JBS), i.e., the external SBD of C-MOS. In the double pulse test simulation, C-MOS exhibited the largest switch loss followed by C-MOSBD, and M-MOSBD is the smallest. Therefore, in power switching applications where reverse conduction is required, M-MOSBD greatly reduces the chip area while presenting better characteristics.
ISSN:1879-2391
1879-2391
DOI:10.1016/j.mejo.2022.105576