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A fast transient FVF-based output capacitorless LDO with self-feedback biasing
An improved flipped voltage follower (FVF) based output-capacitorless low-dropout regulator (OCL-LDO) with self-feedback biasing has been proposed in this paper, achieving better performance without increasing the number of transistors or adding complicated circuits for the customized transient perf...
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Published in: | Microelectronics 2023-04, Vol.134, p.105724, Article 105724 |
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description | An improved flipped voltage follower (FVF) based output-capacitorless low-dropout regulator (OCL-LDO) with self-feedback biasing has been proposed in this paper, achieving better performance without increasing the number of transistors or adding complicated circuits for the customized transient performance. With the proposed self-feedback biasing technique, the equivalent transconductance of the error amplifier is boosted effectively, so that the DC gain of the proposed FVF-LDO is increased and thus both the load and line regulations are improved. At the same time, the dynamic bias current is generated to enhance the transient response. In addition, a single-transistor-based fast discharge loop is added to further enhance the transient response. The proposed OCL-LDO has been designed and fabricated in 180-nm CMOS technology. The chip area is 0.017 mm2, and the measured quiescent current is 79 μA. The proposed LDO can be stable with 0 ∼ 100-pF output capacitance under current ranges from 0 ∼ 100 mA, and the FoM is as small as 0.0036 ps when loading current changes from 0 to 100 mA. |
doi_str_mv | 10.1016/j.mejo.2023.105724 |
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With the proposed self-feedback biasing technique, the equivalent transconductance of the error amplifier is boosted effectively, so that the DC gain of the proposed FVF-LDO is increased and thus both the load and line regulations are improved. At the same time, the dynamic bias current is generated to enhance the transient response. In addition, a single-transistor-based fast discharge loop is added to further enhance the transient response. The proposed OCL-LDO has been designed and fabricated in 180-nm CMOS technology. The chip area is 0.017 mm2, and the measured quiescent current is 79 μA. The proposed LDO can be stable with 0 ∼ 100-pF output capacitance under current ranges from 0 ∼ 100 mA, and the FoM is as small as 0.0036 ps when loading current changes from 0 to 100 mA.</description><identifier>ISSN: 1879-2391</identifier><identifier>EISSN: 1879-2391</identifier><identifier>DOI: 10.1016/j.mejo.2023.105724</identifier><language>eng</language><publisher>Elsevier Ltd</publisher><subject>Fast transient response ; Flipped voltage follower ; LDO ; Output-capacitorless ; Self-feedback biasing</subject><ispartof>Microelectronics, 2023-04, Vol.134, p.105724, Article 105724</ispartof><rights>2023 Elsevier Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c230t-54458f5be993e58346ed29babe2f418a1751680aa0bb453f769e78d97c6b636b3</citedby><cites>FETCH-LOGICAL-c230t-54458f5be993e58346ed29babe2f418a1751680aa0bb453f769e78d97c6b636b3</cites><orcidid>0000-0002-0211-8606</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Liu, Nan</creatorcontrib><creatorcontrib>Xie, Yiling</creatorcontrib><creatorcontrib>Guo, Jianping</creatorcontrib><title>A fast transient FVF-based output capacitorless LDO with self-feedback biasing</title><title>Microelectronics</title><description>An improved flipped voltage follower (FVF) based output-capacitorless low-dropout regulator (OCL-LDO) with self-feedback biasing has been proposed in this paper, achieving better performance without increasing the number of transistors or adding complicated circuits for the customized transient performance. With the proposed self-feedback biasing technique, the equivalent transconductance of the error amplifier is boosted effectively, so that the DC gain of the proposed FVF-LDO is increased and thus both the load and line regulations are improved. At the same time, the dynamic bias current is generated to enhance the transient response. In addition, a single-transistor-based fast discharge loop is added to further enhance the transient response. The proposed OCL-LDO has been designed and fabricated in 180-nm CMOS technology. The chip area is 0.017 mm2, and the measured quiescent current is 79 μA. The proposed LDO can be stable with 0 ∼ 100-pF output capacitance under current ranges from 0 ∼ 100 mA, and the FoM is as small as 0.0036 ps when loading current changes from 0 to 100 mA.</description><subject>Fast transient response</subject><subject>Flipped voltage follower</subject><subject>LDO</subject><subject>Output-capacitorless</subject><subject>Self-feedback biasing</subject><issn>1879-2391</issn><issn>1879-2391</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNp9kE1OwzAQRi0EEqVwAVa-QIJ_YieW2FSFAlJFN8DWsp0xOLRNZLsgbk9KWbBiNaPR90YzD6FLSkpKqLzqyg10fckI4-NA1Kw6QhPa1KpgXNHjP_0pOkupI-QnNEGPM-xNyjhHs00BthkvXhaFNQla3O_ysMvYmcG4kPu4hpTw8maFP0N-wwnWvvAArTXuHdtgUti-nqMTb9YJLn7rFD0vbp_m98Vydfcwny0LxzjJhagq0XhhQSkOouGVhJYpaywwX9HG0FpQ2RBjiLWV4L6WCuqmVbWTVnJp-RSxw14X-5QieD3EsDHxS1Oi90Z0p_dG9N6IPhgZoesDBONlHwGiTm582UEbIris2z78h38DQP9peA</recordid><startdate>202304</startdate><enddate>202304</enddate><creator>Liu, Nan</creator><creator>Xie, Yiling</creator><creator>Guo, Jianping</creator><general>Elsevier Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-0211-8606</orcidid></search><sort><creationdate>202304</creationdate><title>A fast transient FVF-based output capacitorless LDO with self-feedback biasing</title><author>Liu, Nan ; Xie, Yiling ; Guo, Jianping</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c230t-54458f5be993e58346ed29babe2f418a1751680aa0bb453f769e78d97c6b636b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Fast transient response</topic><topic>Flipped voltage follower</topic><topic>LDO</topic><topic>Output-capacitorless</topic><topic>Self-feedback biasing</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Liu, Nan</creatorcontrib><creatorcontrib>Xie, Yiling</creatorcontrib><creatorcontrib>Guo, Jianping</creatorcontrib><collection>CrossRef</collection><jtitle>Microelectronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Liu, Nan</au><au>Xie, Yiling</au><au>Guo, Jianping</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A fast transient FVF-based output capacitorless LDO with self-feedback biasing</atitle><jtitle>Microelectronics</jtitle><date>2023-04</date><risdate>2023</risdate><volume>134</volume><spage>105724</spage><pages>105724-</pages><artnum>105724</artnum><issn>1879-2391</issn><eissn>1879-2391</eissn><abstract>An improved flipped voltage follower (FVF) based output-capacitorless low-dropout regulator (OCL-LDO) with self-feedback biasing has been proposed in this paper, achieving better performance without increasing the number of transistors or adding complicated circuits for the customized transient performance. With the proposed self-feedback biasing technique, the equivalent transconductance of the error amplifier is boosted effectively, so that the DC gain of the proposed FVF-LDO is increased and thus both the load and line regulations are improved. At the same time, the dynamic bias current is generated to enhance the transient response. In addition, a single-transistor-based fast discharge loop is added to further enhance the transient response. The proposed OCL-LDO has been designed and fabricated in 180-nm CMOS technology. The chip area is 0.017 mm2, and the measured quiescent current is 79 μA. The proposed LDO can be stable with 0 ∼ 100-pF output capacitance under current ranges from 0 ∼ 100 mA, and the FoM is as small as 0.0036 ps when loading current changes from 0 to 100 mA.</abstract><pub>Elsevier Ltd</pub><doi>10.1016/j.mejo.2023.105724</doi><orcidid>https://orcid.org/0000-0002-0211-8606</orcidid></addata></record> |
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subjects | Fast transient response Flipped voltage follower LDO Output-capacitorless Self-feedback biasing |
title | A fast transient FVF-based output capacitorless LDO with self-feedback biasing |
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