Hetero dielectric based dual material gate AlGaN channel MISHEMT for enhanced electrical characteristics

• Published in: Microelectronics 2024-12, Vol.154, p.106465, Article 106465
• Main Authors: P.S., Sreelekshmi, Jacob, Jobymol
• Format: Article
• Language: English
• Subjects: AlGaN channel MISHEMT; Gate leakage current; Gate work function engineering; Hetero dielectric
• ISSN: 1879-2391
• DOI: 10.1016/j.mejo.2024.106465

Herein, we report an AlGaN channel metal insulator semiconductor high electron mobility transistor (MISHEMT) in dual material gate (DMG) architecture with two different dielectrics as gate insulator for enhancing the DC performance of the device. The use of a high-k dielectric material as gate insulator below gate metal 1 and a low-k dielectric below gate metal 2 results in significant threshold voltage variation along the channel. This contributes to improved average carrier velocity which in turn results in better current drive. The proposed device exhibits a peak current of 162 mA/mm at zero gate bias, whereas, the DMG and single material gate (SMG) AlGaN channel HEMTs offer currents of 137 mA/mm and 125 mA/mm respectively. The peak transconductances are about 24.66 mS/mm, 23.68 mS/mm and 22.71 mS/mm respectively for the proposed device, DMG and SMG HEMTs. The proposed device reduces the OFF current by an order of 106 compared to that of DMG HEMT. •AlGaN channel HEMT structure with dual material gate and dual dielectric based architecture.•Improved drain current, transconductance, cut off frequency etc.•Reduced leakage current associated with the device.