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Thermoreflectance property of gallium nitride
Based on the principle of thermoreflectance (TR) and experimental data, we have determined the TR coefficients of GaN in the visible and near-ultraviolet spectrum range. The results indicate that the TR coefficient of GaN is larger, approximately 10−3K−1 when the illumination wavelength falls within...
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Published in: | Microelectronics 2024-12, Vol.154, p.106468, Article 106468 |
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Main Authors: | , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites |
Online Access: | Get full text |
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Summary: | Based on the principle of thermoreflectance (TR) and experimental data, we have determined the TR coefficients of GaN in the visible and near-ultraviolet spectrum range. The results indicate that the TR coefficient of GaN is larger, approximately 10−3K−1 when the illumination wavelength falls within the near-ultraviolet range. However, within the visible spectrum, the TR coefficient is low, ranging between 10−5K−1 to 10−6K−1. This suggests that GaN is more responsive to temperature changes within the near-ultraviolet spectrum. The paper provides a physics-mechanism-based explanation for this phenomenon. These results have implications for the thermal design and analysis of GaN-based microelectronic devices. |
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ISSN: | 1879-2391 |
DOI: | 10.1016/j.mejo.2024.106468 |