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1,2,3-Triazolylfullerene-based n-type semiconductor materials for organic field-effect transistors

[Display omitted] The paper describes new organic field-effect transistors with 1-(4-aryl-1,2,3-triazol-1-yl)-2-butylfullerene as a semiconductor layer. The prototype transistor having 2-naphthyl moieties have higher electron mobilities (0.090 ± 10% cm2 V–1 s–1) than that with with biphenyl-4-yl moi...

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Bibliographic Details
Published in:Mendeleev communications 2023-05, Vol.33 (3), p.320-322
Main Authors: Sadretdinova, Zarema R., Akhmetov, Arslan R., Salikhov, Renat B., Mullagaliev, Ilnur N., Salikhov, Timur R.
Format: Article
Language:English
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Summary:[Display omitted] The paper describes new organic field-effect transistors with 1-(4-aryl-1,2,3-triazol-1-yl)-2-butylfullerene as a semiconductor layer. The prototype transistor having 2-naphthyl moieties have higher electron mobilities (0.090 ± 10% cm2 V–1 s–1) than that with with biphenyl-4-yl moieties (0.033 ± 10% cm2 V–1 s–1). The thin film surfaces of triazolylfullerenes with 3-thienyl and 2-naphthyl groups were more uniform and had a lower roughness, which is confirmed by atomic force microscopy studies.
ISSN:0959-9436
DOI:10.1016/j.mencom.2023.04.007