Innovative approaches to the invisible defect on STT-MRAM

Currently, STT-MRAM is the one of the highly demanding device as a good replacement of the conventional working memory with the merits on the cost, power, performance, and reliability. With the new process challenges on MTJ stack, the resistive device of STT-MRAM, they require deep understanding on...

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Published in:Microelectronics and reliability 2019-09, Vol.100-101, p.113431, Article 113431
Main Authors: Lee, Gwang Wook, Ok, Euna, Heo, Suhaeng, Jeong, Daeeun, Lee, Joonmyoung, Shim, Sunnu, Kim, Wonse, Han, Yongwoon, Choi, Hunseong, Kim, Jae Hyun, Cho, Seongjun, Won, Seokjun, Kim, Jinsung
Format: Article
Language:English
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Summary:Currently, STT-MRAM is the one of the highly demanding device as a good replacement of the conventional working memory with the merits on the cost, power, performance, and reliability. With the new process challenges on MTJ stack, the resistive device of STT-MRAM, they require deep understanding on the invisible defect by the process sensitivity just beyond the approach to physical defect. For the first time, this paper will talk about how we could extend the scope of the process improvement on STT-MRAM through the specialized FA methodologies. •Light element, Boron is observed through Atomic Probe Tomography.•Interface roughness links with Boron concentration in Magnetic Tunnel Junction stack.•Boron concentration affects Tunnel Magneto Resistance Ratio.•Normal electrical characteristic is obtained under specific electron beam condition.•Backside nano-probing senses the change at resistance and switching voltage.
ISSN:0026-2714
1872-941X
DOI:10.1016/j.microrel.2019.113431