Impact of electrical stress on total ionizing dose effects on graphene nano-disc non-volatile memory devices

• Published in: Microelectronics and reliability 2020-11, Vol.114, p.113882, Article 113882
• Main Authors: Xi, K., Bi, J.S., Xu, Y.N., Li, Y.D., Zhang, Z.G., Liu, M.
• Format: Article
• Language: English
• ISSN: 0026-2714; 1872-941X
• DOI: 10.1016/j.microrel.2020.113882

The impact of electrical stress on the effects of total ionizing dose (TID) on graphene nano-disc non-volatile memory (GND-NVM) devices is investigated by X-ray irradiation with doses ranging from 50 to 1000 krad. The electrical characteristics of the devices are measured at each dose step and are compared to those before X-ray exposure. Applying non-zero gate stress during irradiation significantly accelerates the degradation process, and the device fails with an unusable memory window at a TID dose of 500 krad. The electric field in the surrounding oxides plays a key role in the observed degradation. •The impact of electrical stress on the effects of total ionizing dose (TID) on graphene nano-disc non-volatile memory (GND-NVM) devices is investigated.•Applying non-zero gate stress during irradiation significantly accelerates the degradation process due to the electric field in the surrounding oxides.