Study on self-heating effect and lifetime in vertical-channel field effect transistor

In this paper, self-heating effect in newly introduced Vertical channel Field Effect Transistors (VFETs) is investigated and discussed, and several architecture parameters such as channel width, number of channels affecting thermal reliability of VFET are studied through simulations. In addition, a...

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Bibliographic Details
Published in:Microelectronics and reliability 2021-04, Vol.119, p.114093, Article 114093
Main Authors: Myeong, Ilho, Shin, Hyungcheol
Format: Article
Language:English
Subjects:
BTI
HCI
Lifetime
Self-heating
Thermal property
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Summary:In this paper, self-heating effect in newly introduced Vertical channel Field Effect Transistors (VFETs) is investigated and discussed, and several architecture parameters such as channel width, number of channels affecting thermal reliability of VFET are studied through simulations. In addition, a study on the change of thermal properties is conducted when air gap/spacer is used to reduce the influence of the parasitic capacitance. It is illustrated that VFET shows high lattice temperature and thermal resistance increase from changes in such architecture parameters, air gap in BEOL (Back End of Line), and air spacers. Additionally, the lattice temperature imbalance between channels can be mitigated by adjusting the inter-channel spacing of a multi-channel VFET.
ISSN:0026-2714
1872-941X
DOI:10.1016/j.microrel.2021.114093